How is such a sophisticated integrated circuit made?
A small component can store tens of thousands of data. The integrated circuit is really amazing. So how is such a magical thing made? Let SAM Sputter Targets answer it for you.
Wafer manufacturing
At present, the mainstream integrated circuits in the industry are all based on Si, so first we need to obtain the raw materials for processing, that is, high-purity silicon. SAM Sputter Target offers high purity silicon materials and is an excellent choice for you. After extracting high-purity silicon, we need to consider how to obtain single crystal silicon with the same crystal orientation. The manufacturer will first obtain one silicon germanium by pulling crystal, in which process N-type silicon or P-type silicon can be performed. The silicon is then polished, polished, sliced, and polished. The silicon wafers used in the industry are double-sided polished, like a disc without holes in the middle, as shown in the following picture.
Many integrated circuits can be processed on a single wafer. However, a piece of pure silicon is not enough, we also need to plate an oxide layer on both sides of pure silicon. Based on the unique advantages of silicon, it is easy to add oxygen to the furnace tube to obtain the natural oxide layer SiO2 insulation layer. This layer is very thin but has considerable significance.
Wafer processing
This will probably repeat 20-30 mainstream processes, including photoresist, exposure, soft/hard baking, photoresist removal, etching, doping (injection, diffusion), annealing, copper plating (metal sputtering), copper removal, etc. The above steps are required to be repeated.
Electrical measurement
After the above steps, many small grids appear on a circular wafer, as shown in the following picture.
Each grid is the prototype of the chip we hope to get. After that, it is necessary to measure the I-V, C-V and other electrical characteristics of the processed film, and a special measuring instrument is completed by probe analysis.
Dicing and packaging
This step is done in the packaging factory. The fab transports the finished wafer to the chip package factory. The packager dices the wafer through the device to get many identical dies. The dies are smaller and thinner than the CPUs we see on the market because they are not yet packaged. The package is to fix the die on a plastic or ceramic base, and lead out many pins, which are finally sealed with glue.
Stanford Advanced Materials (SAM) Corporation is a global supplier of various sputtering targets such as metals, alloys, oxides, ceramic materials. We regularly update knowledge and interesting stories of sputtering targets on our website. If you are interested, please visit https://www.sputtertargets.net/ for more information.
Elimination of common faults in magnetron sputtering films.
The film is dark or black
(1) The degree of vacuum is less than 0.67 Pa. The vacuum should be increased to 0.13-0.4Pa.
(2) The purity of argon is less than 99.9%. Argon should be replaced with a purity of 99.99%.
(3) Air leakage from the inflation system. The inflation system should be inspected to eliminate air leaks.
(4) The primer is not sufficiently cured. The curing time of the primer should be extended appropriately.
(5) The amount of gas discharged from the plated part is too large. Drying and sealing should be carried out.
The surface of the film is dull
(1) The primer is poorly cured or deteriorated. The curing time of the primer should be extended or the primer replaced.
(2) The sputtering time is too long. Construction time should be appropriately shortened.
(3) The sputtering film formation rate is too fast. The sputtering current or voltage should be appropriately reduced.
The color of film is uneven
(1) The primer is unevenly sprayed. The application method of the primer should be improved.
(2) The film layer is too thin. The sputtering rate should be appropriately increased or the sputtering time should be prolonged.
(3) The fixture design is unreasonable. The fixture design should be improved.
(4) The geometry of the plated part is too complicated. The rotation speed of the plated part should be appropriately increased.
Wrinkle and crack
(1) The primer is sprayed too thick. The thickness of the spray should be controlled.
(2) The viscosity of the coating is too high. The viscosity of the coating should be appropriately reduced.
(3) The evaporation rate is too fast. The evaporation rate should be appropriately slowed down.
(4) The film layer is too thick. The sputtering time should be appropriately shortened.
(5) The plating temperature is too high. The heating time of the plated parts should be shortened as appropriate.
There are water marks, fingerprints and ash particles on the surface of the film.
(1) The plated parts are not sufficiently dried after washing. Pre-plating treatment should be strengthened.
(2) Splashing water or saliva on the surface of the plated part. Civilized production should be strengthened and operators should wear masks.
(3) After the primer is applied, the hand is contacted with the plated part, and the surface is left with fingerprints. It is strictly prohibited to touch the surface of the plated part by hand.
(4) There are particles in the paint. The paint should be filtered or replaced.
(5) Electrostatic dust removal failure or particle dust in the spray and curing environment. The dust collector should be replaced and the working environment cleaned.
The film adhesion is poor
(1) The plating parts are not completely degreased. Pre-plating treatment should be strengthened.
(2) The vacuum chamber is not clean. The vacuum chamber should be cleaned. In the process of loading and unloading targets, it is strictly forbidden to contact the magnetron source by hand or unclean objects to ensure the high cleanliness of the magnetron source, which is one of the important measures to improve the bonding force of the film layer.
(3) The fixture is not clean. The fixture should be cleaned.
(4) The primer is not properly selected. The paint should be replaced.
(5) Improper control of sputtering process conditions. The sputtering process conditions should be improved.
Stanford Advanced Materials (SAM) Corporation is a global supplier of various sputtering targets such as metals, alloys, oxides, ceramic materials. We provide high purity of sputtering targets and evaporation materials, as well as target bonding services. If you are interested, please visit our website https://www.sputtertargets.net/ for more information.
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Advantages and Disadvantages of Lithium battery
Advantages
1 Its energy is relatively high. It high storage energy density that has reached 460-600Wh/kg, which is about 6-7 times of lead-acid battery;
2 It has a long service life that can last for more than 6 years. It has been recorded that batteries with lithium iron phosphate as the positive electrode can be used 10,000 times;
3 It has high rated voltage (single working voltage is 3.7V or 3.2V), which is equal to the series voltage of 3 nickel-cadmium or nickel-hydrogen rechargeable batteries. Thus is convenient for battery power packs;
4 It has high power bearing capacity, and the lithium iron phosphate lithium ion battery for electric vehicles can reach the charging capacity of 15-30C, which is convenient for high-intensity start-up acceleration;
5 Its self-discharge rate is very low, which is one of the most outstanding advantages of the battery, generally can be 1% / month or less, less than 1 / 20 of nickel-hydrogen battery;
6 It is light in weight and has a weight of about 1/6-1/5 of the lead acid product in the same volume;
7 It has high adaptability to high and low temperature and can be used in -20 ° C ~ 60 ° C environment. After processing, it can be used in -45 ° C environment;
8 It is environmentally friendly and Its production, use and scrapping do not contain or produce any toxic and harmful heavy metal elements and substances such as lead, mercury and cadmium;
Disadvantages
1 Lithium batteries are less secure and there is a danger of explosion;
2 LiCoO2 ion battery cannot discharge at high current. And it is expensive and not safe;
3 Lithium-ion battery lines need to be protected to prevent the battery from being overcharged;
4 High production requirements and high cost.
5 Lithium batteries have limited use conditions and are dangerous when used at high and low temperatures.
Stanford Advanced Materials (SAM) Corporation is a global supplier of various sputtering targets such as metals, alloys, oxides, ceramic materials. We provide high purity of Lithium sputtering target as well as Lithium evaporation materials, please visit our website https://www.sputtertargets.net for more information.
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Thin film technology will bring a huge blow to the crystalline silicon industry
From the current development of photovoltaic technology, thin film, especially CIGS film will gradually become the mainstream of solar power generation.
Thin-film solar cells are new types of photovoltaic devices that may alleviate the energy crisis. Thin-film solar cells can be fabricated on substrates using inexpensive materials such as ceramics, graphite, and metal sheets. The thickness of the film that can generate voltage is only a few μm, and the current conversion efficiency can reach up to 13%. In addition to the flat surface, the thin-film battery solar cell can also be made into a non-planar structure because of its flexibility, and its application range is large, and it can be combined with a building or become a part of a building body, and is widely used. The full name of CIGS is CuInxGa(1-x)Se2 thin film cell. It is mainly composed of Cu (copper), In (indium), Ga (gallium), and Se (selenium). It has strong light absorption capability, good power generation stability, and conversion. High efficiency, long power generation time during the day, high power generation, low production cost and short energy recovery cycle.
Why would thin film technology win over the traditional crystalline silicon products? The key is that the absolute power generation of thin film is higher, with the average power generation about 8-10% higher (depending on the location and climate of the power station) than crystalline silicon. In addition, the attenuation rate of CIGS thin film power generation is controllable, which means that by taking effective technical means, it is possible to control the occurrence of power generation attenuation. It has been proved that during the operation of the CIGS film station, the power generation is not attenuated but slightly increased.
Although the crystalline silicon industry has matured and the conversion efficiency of single crystal silicon is high, the short technology has restricted the sustainable development of the crystalline silicon industry. Moreover, its industrial chain is long and the cost is difficult to control, so crystalline silicon products are not competitive. From this point of view, the development of thin film technology, especially CIGS film, will get better and better.
Stanford Advanced Materials (SAM) is a global sputtering targets manufacturers which supplies high-quality and consistent products to meet our customers’ R&D and production needs. e provide high purity CIGS materials and we insure you will be satisfied with our products. Please visit our website https://www.sputtertargets.net/ for more information.
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Six important facts you need to know about semiconductor wafers
1. Semiconductor, as it literally seems to be, is a solid substance whose conductivity is between insulator and most metals, either due to the addition of an impurity or because of temperature effects. In other words, the conductivity of the semiconductor can be controlled by adding impurities as a specific amount of other materials to the semiconductor.
2.Most semiconductor wafers are made of silicon, which is the second-most abundant element in the Earth's crust (about 28% by mass) after oxygen and the eighth-most common element in the entire universe by mass. In addition to silicon, semiconductors also use other materials, including germanium, gallium arsenide, germanium, indium phosphide, sapphire and quartz.
3. Semiconductor wafers are available in a spread of diameters. The first semiconductor wafer made inside the US in 1960 was just 1 inch in diameter. Today, standard semiconductor wafers go up to 12 inches to 18 inches.
4. Water is the key component of manufacturing Silicon wafers. It is a compound that basically is a general solvent for all substances, silicon included. A large production facility uses up to 4.8 million of gallons of water everyday to supply Silicon wafers for manufacturing needs and supply.
5. The thickness of semiconductor wafers vary greatly. The thickness of wafer is always determined by the mechanical strength of any material used to make it. Regardless of what the semiconductor is made of, the wafer must be thick enough to support its own weight so that it does not break during processing.
6. Contamination is inevitable during the manufacture and transportation of semiconductors. Appropriate storage conditions must be in place to prevent contamination and/or degradation after shipment. Semiconductor wafers that are not vacuum sealed must be placed in a Nitrogen (N2) cabinet at a flow rate of 2 to 6 SCFH (Standard Cubic Feet per Hour).
Stanford Advanced Materials (SAM) is a global sputtering targets manufacturers which supplies high-quality and consistent products to meet our customers’ R&D and production needs. Please visit https://www.sputtertargets.net/ for more information.
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Three minutes to know Physical Vapor Deposition(PVD) gold sputtering
Gold is a popular precious metal that has been used for centuries as currency, hedging and jewelry for its noble and beautiful gold color.
Gold sputtering coating is a thin film deposition process in which gold or gold alloy is bombarded with high energy ions in a vacuum chamber, causing gold atoms or molecules to be "sputtered" into the vapor and condensed on the substrate to be coated. Sputtering is one method of PVD process, the other two of which are thermal evaporation deposition and electron beam vapor deposition, and gold is also applied in these two methods. In thermal evaporation deposition, gold evaporates in a low pressure environment with resistive heating elements; and in electron beam vapor deposition, gold is heated by an electron beam, and then condensed on the substrate to be coated.
Apart from PVD coating, there are other ways for gold coatings such as gold plating and gold filling. Gold plating is a method which deposits a thin layer of gold on the surface of another metal by chemical or electrochemical plating. The advantages of gold plating are inexpensive and easy. However, the coating it produces is relatively soft and less durable, and what’s worse, its chemical process would cause pollution that is far away from environmentally friendly. Gold Filling is the mechanical bonding of gold to metal under high temperature and pressure. It produces a thicker coating than PVD gold sputtering and gold plating, and thus it is usually more expensive.
The constant contact of skin or clothing may abrade the coatings, especially in watch and jewelry industry. Thus, PVD gold sputtering is preferred in these two industries because the coatings it produces are harder and more durable than that of electrolytic gold plating or gold filling. Compared to other types of gold coatings, the main advantages of PVD gold sputtering coating are their durability, retention of gloss, corrosion resistance and abrasion resistance in contact with the skin, thus extending the life of jewelry. PVD gold sputtering not only provides the exact color and brightness which evokes the general feeling of love and attraction with jewelry, but also has the advantage of being more environmentally friendly and durable than gold plating or gold filling for producing a gold coating.
Stanford Advanced Materials(SAM) is a global sputtering targets manufacturers which supplies high-quality and consistent products to meet our customers’ R&D and production needs. Please visit https://www.sputtertargets.net/ for more information.
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